The Gaussian doping is used to optimize the performance of InP/InGaAs uni-traveling-carrier photodiode (UTC-PD) in this ......

In this paper, the fabrication and testing results of a two-dimensional pin-cushion position sensitive detector (PSD) ar......

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1 xAs buffer layer are determined in orde......

Using the first-principles method based on the density functional theory (DFT), the work function of seven different GaN......

We extensively discuss 25 Gb/s per wavelength capacity in both IEEE and ITU-T standardization to support the increasing ......

Angle tolerant transmissive subtractive color filters incorporating a metasurface exploiting hydrogenated amorphous sili......

We create a GaN photocathode based on graded AlxGa1?xN buffer layers to overcome the influence of buffer-emission layer ......

A geometry of transient-grating self-referenced spectral interferometry (TG-SRSI) is proposed for weak femtosecond pulse......

The intensifying process of polarization effect at room temperature in a pixellated Cadmium zinc telluride (CdZnTe) mono......

Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor de......